Lanthanide sensitization in II-VI semiconductor materials: a case study with terbium(III) and europium(III) in zinc sulfide nanoparticles.
Lanthanide sensitization in II-VI semiconductor materials: a case study with terbium(III) and europium(III) in zinc sulfide nanoparticles.
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DOI：
10.1021/jp109786w
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发表时间：
2011-04-28
期刊：
影响因子：
--
通讯作者：
Petoud S
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文献类型：
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作者：
Mukherjee P;Shade CM;Yingling AM;Lamont DN;Waldeck DH;Petoud S
这项工作探讨了硫化锌 (ZnS) 半导体纳米粒子的电子结构对发光镧系元素 Tb3+ 和 Eu3+ 阳离子的敏化作用。收集的激发光谱，同时监测镧系元素发射带，表明 ZnS 纳米颗粒充当 Tb3+ 和 Eu3+ 敏化的天线。镧系元素离子发光敏化机制根据陷阱位点之间的能量和电荷转移进行了合理化，并基于 Dorenbos 及其同事提出的半经验模型来描述能级方案。该模型表明Tb3+和Eu3+在ZnS纳米粒子中的发光敏化机制是不同的；即Tb3+充当空穴陷阱，而Eu3+充当电子陷阱。通过将研究从 ZnS 纳米粒子扩展到其他 II-VI 族半导体材料，对该模型进行了进一步测试；即CdSe、CdS和ZnSe。
This work explores the sensitization of luminescent lanthanide Tb3+ and Eu3+ cations by the electronic structure of zinc sulfide (ZnS) semiconductor nanoparticles. Excitation spectra collected, while monitoring the lanthanide emission bands, reveals that the ZnS nanoparticles act as an antenna for the sensitization of Tb3+ and Eu3+. The mechanism of lanthanide ion luminescence sensitization is rationalized in terms of an energy and charge transfer between trap sites and is based on a semi-empirical model, proposed by Dorenbos and coworkers, to describe the energy level scheme. This model implies that the mechanisms of luminescence sensitization of Tb3+ and Eu3+ in ZnS nanoparticles are different; namely Tb3+ acts as a hole trap, while Eu3+ acts as an electron trap. Further testing of this model is made by extending the studies from ZnS nanoparticles to other II–VI semiconductor materials; namely, CdSe, CdS, and ZnSe.