A versatile chemical vapor deposition method to synthesize one-dimensional silica-sheathed nanostructures
A versatile chemical vapor deposition method to synthesize one-dimensional silica-sheathed nanostructures
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一种合成一维二氧化硅包裹纳米结构的通用化学气相沉积方法
DOI：
10.1021/jp711963p
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发表时间：
2008-06-12
影响因子：
3.7
通讯作者：
Chen, Q.
中科院分区：
文献类型：
--
作者：
Wei, D. P.;Ma, Y.;Chen, Q.
我们开发了一种简单而通用的化学气相沉积（CVD）方法，在一系列一维纳米结构（如ZnS，CdS，ZnSe，Si和Ge纳米线）上合成厚度可控的均匀二氧化硅鞘层。纳米线/二氧化硅纳米电缆，其特征在于使用电子显微镜和能量色散X射线光谱。观察到二氧化硅鞘层显着提高了纳米线的热稳定性，同时保持其光学性质不变。研究了硅壳的生长机理和合成条件。
We developed a simple and versatile chemical vapor deposition (CVD) method to synthesize uniform silica sheaths with controlled thickness on a series of one-dimensional nanostructures, such as ZnS, CdS, ZnSe, Si, and Ge nanowires. The nanowire/silica nanocables were characterized using electron microscopy and energy dispersive X-ray spectrometry. The silica sheath was observed to dramatically improve the thermal stability of the nanowires while keep their optical properties unchanged. The growth mechanism and the synthesis conditions for the silica shell were studied.