Topography and crystallography of a Pt film on a Cu buffer layer and a Si(111)(7 × 7) substrate
Topography and crystallography of a Pt film on a Cu buffer layer and a Si(111)(7 × 7) substrate
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Cu 缓冲层和 Si(111)(7 × 7) 衬底上 Pt 薄膜的形貌和晶体学
DOI：
10.1016/0169-4332(93)90325-6
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
K. Kusao
中科院分区：
文献类型：
--
作者：
Masahiko Yamamoto;K. Nishikawa;T. Kingetsu;T. Kurumizawa;K. Kusao
研究了Cu缓冲层和Si（111）（7× 7）衬底上Pt膜的形貌和晶体学。用RHEED对Pt膜、Cu缓冲层和Si衬底进行了晶体学分析。Pt和Cu外延生长，取向关系为Pt（111）< 11 2><$Cu（111）< 11 2><$Si（111）< 1 1 0>。发现在Cu缓冲层上的Pt膜的生长是假晶的。STM研究表明，在Cu缓冲层和Si衬底上的Pt膜的整个表面上形成了许多截头三棱锥的Pt。这些截头三棱锥的Pt的特性进行了描述。
The topography and crystallography of a Pt film on a Cu buffer layer and a Si (111)(7× 7) substrate have been investigated. A crystallographic analysis of the Pt film, the Cu buffer layer and the Si substrate has been made by RHEED. Pt and Cu grew epitaxially and the orientational relationship was determined to be Pt (111)< 11 2>⋎ Cu (111)< 11 2>⋎ Si (111)< 1 1 0>. The growth of the Pt film on the Cu buffer layer was found to be pseudomorphic. An STM study showed that a number of truncated triangular pyramids of Pt were formed all over the surface of the Pt film on the Cu buffer layer and the Si substrate. The characteristics of these truncated triangular pyramids of Pt are described.