Direct growth of high-quality thick CdTe epilayers on Si (211) substrates by metalorganic vapor phase epitaxy for nuclear radiation detection and imaging
Direct growth of high-quality thick CdTe epilayers on Si (211) substrates by metalorganic vapor phase epitaxy for nuclear radiation detection and imaging
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DOI：
10.1007/s11664-006-0251-5
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发表时间：
2006-06
影响因子：
2.1
通讯作者：
M. Niraula;K. Yasuda;H. Ohnishi;H. Takahashi;K. Eguchi;K. Noda;Y. Agata
中科院分区：
文献类型：
--
作者：
M. Niraula;K. Yasuda;H. Ohnishi;H. Takahashi;K. Eguchi;K. Noda;Y. Agata
