The Chemical Polishing and Etch Pitting of Sapphire
The Chemical Polishing and Etch Pitting of Sapphire
复制标题
DOI：
10.1149/1.2407840
复制
发表时间：
1971-11
影响因子：
3.9
通讯作者：
R. G. Vardiman
中科院分区：
文献类型：
--
作者：
R. G. Vardiman
本文研究了三种位错腐蚀剂、、和和两种化学抛光剂对蓝宝石的有效温度和取向范围。此外，比较了蚀刻剂对位错点蚀的有效性。结果表明，在平面上和（0001）面上获得最佳点蚀效果。
Three dislocation etchants, , , and , and two chemical polishes, and have been investigated as to their effective temperature and orientation ranges on sapphire. In addition the etchants are compared for effectiveness of dislocation pitting. It is found that the best pitting is obtained with on the plane, and on the (0001) plane.