Raman scattering characterization of residual strain and alloy composition in bulk Si1−xGex crystal
Raman scattering characterization of residual strain and alloy composition in bulk Si1−xGex crystal
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块体 Si1−xGex 晶体中残余应变和合金成分的拉曼散射表征
DOI：
10.1051/epjap:2004124
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发表时间：
2004
影响因子：
1
通讯作者：
M. Tatsumi
中科院分区：
文献类型：
--
作者：
M. R. Islam;M. Yamada;N. Abrosimov;M. Kiyama;M. Tatsumi
采用拉曼散射（RS）实验测定了具有成分梯度的Si - 1-x - Ge单晶的残余应变和合金成分，该单晶可作为聚焦和衍射x射线单色仪。由于RS结果受到应变和成分的影响，因此很难从观测到的声子位置单独确定它们。结合建立的块状混合晶体应变模型，分析了应变对RS的影响，并对残余应变和合金成分进行了评价。结果表明，红外光谱法测定的合金成分与标准化学分析结果吻合较好。在0.034 ~ 0.055的近似线性变化范围内，轴向应变分量和径向应变分量分别在-0.76 × 10 -3 ~ -1.2 × 10 -3和3.6 × 10 -4 ~ 5.7 × 10 -4之间变化。
Raman scattering (RS) experiments have been carried out to determine both residual strain and alloy composition in a bulk Si 1-x Ge x single crystal with compositional gradient, which can be used as a focusing and diffracting X-ray monochromator. Since RS results are influenced both by strain and by composition, it is difficult to determine them separately from the observed phonon position. By analyzing Strain effect on RS in connection with a strain model developed for bulk mixed crystals, both residual strain and alloy composition are evaluated. It is found that the alloy composition evaluated from the RS results is in good agreement with that measured by the standard chemical analysis. It is also found that the axial and radial strain components vary from -0.76 x 10 -3 to -1.2 x 10 -3 and 3.6 x 10 -4 to 5.7 x 10 -4 , respectively, for the almost linear variation in composition from 0.034 to 0.055.