Electrical breakdown in thin gate and tunneling oxides
Electrical breakdown in thin gate and tunneling oxides
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DOI：
10.1109/jssc.1985.1052311
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发表时间：
1985
影响因子：
3.1
通讯作者：
Ih-Chin Chen;S. Holland;Chenming Hu
中科院分区：
文献类型：
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作者：
Ih-Chin Chen;S. Holland;Chenming Hu
在这项研究中的击穿薄氧化物（7.9-32 nm）进行高场电流注入的影响。击穿的物理机制被发现是由于空穴俘获在阴极界面处的局部场增强。这种空穴捕获的来源被认为是SiO2中的碰撞电离。本文提出了一个基于碰撞电离和阴极空穴俘获的氧化层击穿的定量模型，该模型与实验J-t和击穿时间（tBD）结果吻合得很好。我们观察到log tBD随1/E线性变化，而不是通常假设的随E线性变化。场加速度因子，即，对于7.9 nm氧化物，log tBD对1/E图的斜率约为140十年/厘米/兆伏，其中约25%来自碰撞电离系数的场依赖性，其余来自福勒-诺德海姆电流对1/E的依赖性。基于这个模型，氧化物磨损性能可能会改善工艺变化，减少界面空穴捕获，如辐射硬处理，除了减少颗粒污染和晶体缺陷。
The breakdown of thin oxides (7.9-32 nm) subjected to high-field current injection is investigated in this study. The physical mechanism of breakdown is found to be localized field enhancement at the cathode interface due to hole trapping. The source of this hole trapping is believed to be impact ionization in the SiO2. A quantitative model for oxide breakdown based on impact ionization and hole trapping at the cathode is presented and shown to agree well with the experimentalJ - tand time-to-breakdown, (tBD) results. We observe that log tBDvaries linearly with 1/Erather than withEas commonly assumed. The field acceleration factor, i.e., the slope of the log tBDversus 1/Eplot, is approximately 140 decades per centimeter per megavolt for the 7.9 nm oxide, with approximately 25 percent of this coming from the field dependence of the impact ionization coefficient and the remainder from the Fowler-Nordheim current dependence on 1/E. Based on this model, oxide wearout performance might be improved by process changes that reduce interface hole trapping, such as radiation-hard processing, in addition to the reduction of particulate contamination and crystal defects.