Self‐potential global tomography including topographic effects
Self‐potential global tomography including topographic effects
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DOI：
10.1046/j.1365-2478.1997.570296.x
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发表时间：
1997-09
影响因子：
2.6
通讯作者：
D. Patella
中科院分区：
文献类型：
--
作者：
D. Patella
本文是先前研究的延伸，其中概述了自电位地表层析成像的原理。这里提出的新的论点是适当的占地形的影响和一个强大的方法，全球三维断层扫描。2D的情况下，最初被认为是为了促进新方法的全面理解。为了测量地形畸变，引入了坡度效应和表面正则化的概念，作为在识别地下一次和感应电源的断层图像之前计算测量的自电位数据的逐点校正因子的适当方法。层析成像的方法，然后通过再次引入的扫描函数和电荷发生概率函数的概念，这是充分处理在前面的文件。3D全局层析成像的新方法在这里意味着与自然电场的任何两个正交表面分量相关的电荷发生概率函数的合成，以充分考虑自势场的总表面分量，从而获得最大量的信息。两个领域的例子来显示所提出的方法的充分有效性。它们分别指的是为考古目的进行的近地表调查和在活火山地区进行的非常深入的调查。
This paper is an extension of a previous study, in which the principles of self‐potential ground surface tomography were outlined. The new arguments which are here set forth are the proper accounting for the topographic effects and a robust approach to global 3D tomography. The 2D case is initially considered in order to facilitate a full understanding of the new method. In order to gauge the topographic distortions, the concepts of slope effect and surface regularization are introduced, as suitable means to compute point by point correction factors of the measured self‐potential data, prior to the recognition of the tomographic images of the primary and induced electric sources underground. The tomographic approach is then developed by introducing again the concepts of the scanning function and of the charge occurrence probability function, which were amply dealt with in the previous paper. The new approach to 3D global tomography means here the composition of charge occurrence probability functions related to any two orthogonal surface components of the natural electric field, in order to account fully for the total surface component of the self‐potential field and hence to elicit the greatest amount of information. Two field examples are presented to show the full effectiveness of the proposed method. They refer, respectively, to a near‐surface investigation for archaeological purposes and to a very deep investigation in an active volcanic area.