Improvement of organic electroluminescent device performance by in situ plasma treatment of indium–tin-oxide surface
Improvement of organic electroluminescent device performance by in situ plasma treatment of indium–tin-oxide surface
复制标题
通过原位等离子体处理氧化铟锡表面提高有机电致发光器件性能
DOI：
10.1016/s0022-2313(99)00581-5
复制
发表时间：
2000
影响因子：
3.6
通讯作者：
Y. Taga
中科院分区：
文献类型：
--
作者：
M. Ishii;Tomohiko Mori;H. Fujikawa;S. Tokito;Y. Taga
采用x射线光电子能谱（XPS）和紫外光电子能谱（UPS）对Ar-50% o2等离子体处理后的铟锡氧化物（ITO）表面进行了原位分析，探讨了ITO表面性能与有机电致发光（EL）器件性能之间的关系。ITO表面的等离子体处理降低了有机电致发光器件的工作电压。UPS测量结果显示，等离子体处理导致ITO表面功函数增加超过1eV。XPS测量表明，等离子体处理有效地去除了ITO表面的碳污染物。功函数与表面碳浓度相关。从这些结果可以看出，电致发光器件中工作电压的降低是由于等离子体处理去除碳所导致的功函数的增加。
Indium–tin-oxide (ITO) surface treated by Ar–50% O2plasma has been in situ analyzed using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS), to investigate the relations between the properties of the ITO surface and the properties of organic electroluminescent (EL) devices. The plasma treatment of the ITO surface lowered the operating voltage of the organic EL device. The UPS measurements revealed that the plasma treatment resulted in the increase of the work function of the ITO surface by more than 1eV. The XPS measurements showed that the plasma treatment effectively removed carbon contaminants from the ITO surface. The work function was correlated with the surface carbon concentration. From these results, the lowering of the operating voltage in the EL devices is attributed to the increase of the work function resulting from the carbon removal by the plasma treatment.
与有机电子器件相关的有机界面
DOI：
--
发表时间：
2007
期刊：
影响因子：
--
作者：
中治弘行;山田耕司;鈴木祥之;Akira Sekiguchi;K. Seld
通讯作者：
K. Seld