Analysis of asymmetric property with DC bias current on thin-film magnetoimpedance element
Analysis of asymmetric property with DC bias current on thin-film magnetoimpedance element
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DOI：
10.1063/1.5006709
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发表时间：
2018-05
期刊：
影响因子：
1.6
通讯作者：
H. Kikuchi;C. Sumida
中科院分区：
文献类型：
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作者：
H. Kikuchi;C. Sumida
利用偏置磁化率理论和麦克斯韦方程，对直流偏置下薄膜元件的磁阻抗分布进行了理论分析。虽然分析模型预测具有矩形横截面的元件在直流偏置电流下显示出关于Z轴的对称阻抗特性，但是实验结果显示出不对称特性。在考虑元件形状不平衡和梯形截面的情况下，定性地解释了薄膜元件的阻抗不对称特性，并利用偏置磁化率理论和麦克斯韦方程对直流偏置电流作用下薄膜元件的磁阻抗分布进行了理论分析。虽然分析模型预测具有矩形横截面的元件在直流偏置电流下显示出关于Z轴的对称阻抗特性，但是实验结果显示出不对称特性。考虑到单元的形状不平衡和梯形截面，我们定性地解释了这种阻抗不对称特性。
We theoretically analyzed the magnetoimpedance profile of a thin-film element with a DC bias current using the bias susceptibility theory and Maxwell’s equations. Although the analysis model predicts that an element with a rectangular cross section shows symmetric impedance property with respect to the Z-axis with DC bias current, the experimental results showed asymmetric properties. Taking the shape imbalance and trapezoidal cross section of the element into account, we explained the asymmetric impedance properties qualitatively.We theoretically analyzed the magnetoimpedance profile of a thin-film element with a DC bias current using the bias susceptibility theory and Maxwell’s equations. Although the analysis model predicts that an element with a rectangular cross section shows symmetric impedance property with respect to the Z-axis with DC bias current, the experimental results showed asymmetric properties. Taking the shape imbalance and trapezoidal cross section of the element into account, we explained the asymmetric impedance properties qualitatively.