Fast Thermal Simulation of FinFET Circuits Based on a Multiblock Reduced-Order Model
Fast Thermal Simulation of FinFET Circuits Based on a Multiblock Reduced-Order Model
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基于多块降阶模型的 FinFET 电路快速热仿真
DOI：
10.1109/tcad.2015.2501305
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发表时间：
2016
影响因子：
2.9
通讯作者：
M. Cheng
中科院分区：
文献类型：
--
作者：
Wangkun Jia;B. Helenbrook;M. Cheng
提出了一种基于多块降阶建模方法的快速、准确的集成电路 (IC) 热仿真方法。该模型将热方程从物理域投影到功能空间上，以使用少量自由度 (DOF) 表示热解。该方法不需要对物理几何形状、尺寸、边界条件或热流路径进行假设，而紧凑或集总热模型通常需要这样做。开发的多块热模型应用于 FinFET 器件/电路结构，包括由多个 NAND 门组成的三块电路结构。该模型根据详细的数值模拟 (DNS) 在多块结构上进行了验证。结果表明，所开发的多块模型为受到功率脉冲激励的多块 IC 结构提供了精确的热解，其脉冲频率、宽度、形状和时间偏移与模型构建中使用的那些有很大偏差。一般来说，该方法提供了与 DNS 一样详细的精确热解决方案，并将数值 DOF 减少了 5 到 6 个数量级。
A methodology for fast and accurate thermal simulation of integrated circuits (ICs) is presented based on a multiblock reduced order modeling approach. The model projects the heat equation from a physical domain onto a functional space to represent the thermal solution using a small number of degrees of freedom (DOFs). The approach requires no assumptions about the physical geometry, dimensions, boundary conditions or heat flow pathways, as is usually needed for compact or lumped thermal models. The developed multiblock thermal model is applied to FinFET device/circuit structures including a three-block circuit structure consisting of several NAND gates. The model is verified on multiblock structures against a detailed numerical simulation (DNS). It is shown that the developed multiblock model gives accurate thermal solutions for a multiblock IC structure subjected to power pulse excitations whose pulse frequency, width, shape, and shift in time substantially deviate from those used in model construction. In general, the approach offers accurate thermal solutions as detailed as a DNS with a reduction in the numerical DOF by 5 to 6 orders of magnitude.