Dynamics of Radical Cation of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Extreme-Ultraviolet and Electron Beam Lithographies
Dynamics of Radical Cation of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Extreme-Ultraviolet and Electron Beam Lithographies
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用于极紫外和电子束光刻的聚(4-羟基苯乙烯)基化学放大抗蚀剂的自由基阳离子动力学
DOI:
10.1143/jjap.49.106501
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发表时间:
2010
期刊:
影响因子:
--
通讯作者:
and S. Tagawa
中科院分区:
文献类型:
--
作者:
K. Okamoto;M. Tanaka;T. Kozawa;and S. Tagawa
The elucidation of the reaction mechanism after the irradiation of ionizing radiation onto resist polymers is an important issue for extreme-ultraviolet and electron beam chemically amplified resist. The dynamics of radical cations of polymers is essential for elucidating the mechanism of acid formation (deprotonation) in resists. The transient absorption of poly (4-methoxystyrene)(PMOS) was observed in 1, 2-dichloroethane and p-dioxane solutions by pulse radiolysis. In the near-infrared region, a characteristic charge resonance band, which represents the π–π interaction between the two benzene rings of the intramolecular PMOS dimer radical cation [(Ph–OCH 3) 2+·], was observed. In the presence of halogenated hydrocarbon molecules acting as electron scavengers, the yield of (Ph–OCH 3) 2+· was enhanced by the formation of an ion/charge transfer complex. Density functional theory (DFT) calculations were also performed to investigate the electronic state of (Ph–OCH 3) 2+·.