Defect characterization of InSb1−xNx grown using radio frequency nitrogen plasma-assisted molecular beam epitaxy
Defect characterization of InSb1−xNx grown using radio frequency nitrogen plasma-assisted molecular beam epitaxy
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DOI：
10.1088/0022-3727/41/16/165301
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发表时间：
2008-08
期刊：
影响因子：
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通讯作者：
K. P. Lim;S. F. Yoon;H. T. Pham;S. Tripathy
中科院分区：
文献类型：
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作者：
K. P. Lim;S. F. Yoon;H. T. Pham;S. Tripathy
我们报道了用射频氮等离子体辅助分子束外延生长InSb 1 −xNx，并用可见波长拉曼散射和X射线衍射对其进行表征。研究了生长温度（330-420 °C）和等离子体功率（200-500 W）对N诱导缺陷的影响。Sb反位缺陷从A1 gSb模式被证明是占主导地位的，在高的生长温度和低的等离子体功率。另一方面，高的生长温度和高的等离子体功率诱导间隙Sb-N缺陷的形成。在最低衬底温度（330 °C）和等离子体功率（200 W）下观察到Sb相关缺陷的减少。根据实验结果，提出了一种可能的缺陷形成机制。
We report the growth of InSb1−xNx using radio frequency nitrogen plasma-assisted molecular beam epitaxy and its characterization using visible wavelength Raman scattering and x-ray diffraction. The effects of the growth temperature (330–420 °C) and the plasma power (200–500 W) on the N-induced defects were studied. Sb antisite defects from the A1gSb mode are shown to be dominant at a high growth temperature and a low plasma power. On the other hand, the high growth temperature and high plasma power induce the formation of interstitial Sb–N defects. A reduction in Sb related defects is observed at the lowest substrate temperature (330 °C) and plasma power (200 W). Based on the experimental results, a possible mechanism of defect formation is suggested.