Investigations on the blue-shift phenomena in argon plasma intermixed InGaAs/InGaAsP quantum well structures
Investigations on the blue-shift phenomena in argon plasma intermixed InGaAs/InGaAsP quantum well structures
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DOI：
10.1016/j.apsusc.2004.06.083
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发表时间：
2004-10
影响因子：
6.7
通讯作者：
J. Arokiaraj;H. Djie;T. Mei
中科院分区：
文献类型：
--
作者：
J. Arokiaraj;H. Djie;T. Mei
在这篇文章中，我们提出了一种吸引人的用于InP基异质结的Ar等离子体诱导量子阱混合的方法。MOVPE生长的五种晶格匹配的InGaAs/InGaAsP量子阱在等离子体曝光和退火热处理后出现了较大的蓝移和最小的线宽展宽。这种大的漂移是由于电感耦合等离子体系统中由高离子电流密度产生的高密度点缺陷的相互扩散造成的。相互扩散产生了高度的混合，III族和V族元素在它们自己的亚晶格上进行了相干扩散。混合不会导致材料质量下降，这突出了等离子体量子阱混合技术非常适合于光子集成电路的制造。
In this paper, we present an attractive approach of argon plasma-induced quantum well intermixing for InP based heterostructures. The lattice-matched five quantum wells of InGaAs/InGaAsP grown by MOVPE exhibited a large blue shift with minimal line width broadening after plasma exposure and annealing. This large shift occurs due to interdiffusion of high density of point defects created by high ion current density in the inductively coupled plasma system. The interdiffusion creates a high degree of intermixing, with coherent diffusion of the group III and group V elements on their own sublattices. Intermixing results in no material quality degradation that highlights the plasma quantum well intermixing technique is well suited for photonic integration circuit fabrication.