Enhancement of ultraviolet detecting by coupling the photoconductive behavior of GaN nanowires and p-n junction.
Enhancement of ultraviolet detecting by coupling the photoconductive behavior of GaN nanowires and p-n junction.
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DOI：
10.1364/oe.20.020748
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发表时间：
2012-08
期刊：
影响因子：
3.8
通讯作者：
Nishuang Liu;Wei Tian;Xianghui Zhang;J. Su;Qi Zhang;Yihua Gao
中科院分区：
文献类型：
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作者：
Nishuang Liu;Wei Tian;Xianghui Zhang;J. Su;Qi Zhang;Yihua Gao
报道了在传统GaN p-n膜结构探测器中引入倾斜GaN纳米线后，其紫外响应特性得到了极大的改善。GaN纳米线/p-n膜结构具有良好的光响应性能，在365 nm紫外光照射下，零偏压下的开关电流对比度高达1800，响应时间短于0.1 s，灵敏度高，稳定性好，重复性好。通过对实验结果和器件能带图的分析，发现这种增强主要是由于倾斜GaN纳米线中的光生电子。
The giant improvement of ultraviolet response behavior of a conventional GaN p-n film structured detector by the incorporation of slanted GaN nanowires is reported. The GaN nanowires/p-n film structure shows great photoresponse performance, exhibiting a short response time <0.1 s and a high sensitivity, being stable and reproducible with an on/off current contrast ratio as high as 1800 at zero bias under 365 nm ultraviolet light irradiation. Via carefully analyzing the experiment result and the band diagram of the device, the enhancement can be predominantly attributed to the photogenerated electrons in the slanted GaN nanowires.