Improvement of magnetization and leakage current properties of magnetoelectric BaFeO3 thin films by Zr substitution
Improvement of magnetization and leakage current properties of magnetoelectric BaFeO3 thin films by Zr substitution
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DOI：
10.1063/1.1868887
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发表时间：
2005-02
影响因子：
4
通讯作者：
T. Matsui;E. Taketani;H. Tsuda;N. Fujimura;K. Morii
中科院分区：
文献类型：
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作者：
T. Matsui;E. Taketani;H. Tsuda;N. Fujimura;K. Morii
我们报道了BaFe 1 − xZrxO 3 −δ（x=0.5和0.7）单晶薄膜的合成，其磁性和漏磁性能得到了极大的改善。薄膜被发现是极好的绝缘体，对于x=0.7的样品，在150 kV scincm的偏置电场下，漏电流密度高达约1.1×10−5A scincm 2。这比BaFeO3−δ单晶薄膜的10−2小得多，这意味着通过锆替代，漏电流特性得到了明显改善。在5K下测量的磁滞回线中，x=0.7的样品的饱和磁化强度为0.98μB，而x=0.5的样品为0.09μB.这意味着x=0.7样品的磁有序性得到了极大的增强，这可能是由于Fe离子的铁磁自旋排列。
We report on the synthesis of the magnetoelectric BaFe1−xZrxO3−δ (x=0.5 and 0.7) single-crystalline films whose magnetic and leakage properties have been greatly improved. The films were found to be excellent insulators, up to the leakage current density of about 1.1×10−5A∕cm2 at the bias electric field of 150kV∕cm for the x=0.7 sample. This is much less than 10−2 of that for the BaFeO3−δ single-crystalline film, which means that the leakage current properties have been distinctly improved by zirconium substitution. As for the magnetic properties, the hysteresis loops measured at 5K for the x=0.7 samples apparently show huge saturation magnetization of 0.98μB∕Fe ion, in contrast to 0.09μB∕Fe ion for the x=0.5 sample. This implies that the magnetic ordering for the x=0.7 sample has been greatly enhanced, possibly due to the ferromagnetic spin alignment of Fe ions.