Polysiloxane formation at the irradiated polymer surface by the chemical vapor deposition method
Polysiloxane formation at the irradiated polymer surface by the chemical vapor deposition method
复制标题
通过化学气相沉积法在辐照聚合物表面形成聚硅氧烷
DOI：
10.1021/cm00025a019
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发表时间：
1993
影响因子：
8.6
通讯作者：
M. Tsunooka
中科院分区：
文献类型：
--
作者：
M. Shirai;Hirotaka Kinoshita;Tomonobu Sumino;T. Miwa;M. Tsunooka
研究了通过化学气相沉积（CVD）方法在含有亚氨基磺酸盐的聚合物的紫外线照射膜表面形成聚硅氧烷。由于亚氨基磺酸盐在紫外线照射下可以形成磺酸，因此聚合物的受照射表面变得亲水。大气中的水吸附发生在聚合物的辐射表面。使用石英晶体微天平研究水吸附。当聚合物薄膜的辐照表面在环境温度下暴露于原硅酸四烷基酯及其同系物的蒸气时，在聚合物辐照区域的表面形成聚硅氧烷网络。在未照射区域没有形成聚硅氧烷网络。聚硅氧烷的形成速率受聚合物、亚氨基磺酸盐和硅化合物的结构影响。在辐照和随后用原硅酸四烷基酯或其同系物的蒸气进行CVD处理后获得的聚合物膜表现出良好的耐氧等离子体蚀刻性。将含有亚氨基磺酸盐作为添加剂的聚合物的受照射表面处的聚硅氧烷形成与含有亚氨基磺酸盐单元作为侧基的聚合物进行比较。
Polysiloxane formation by a chemical vapor deposition (CVD) method at the surface of UV-irradiated films of polymers containingimino sulfonates was studied. Since imino sulfonates can form sulfonic acids on UV irradiation, the irradiated surface of the polymers becomes hydrophilic. The water sorption from the atmosphere occurred at theirradiated surface of the polymers. The water sorption was studied using quartz crystal microbalance. When the irradiated surface of the polymer films was exposed to the vapor of tetraalkyl orthosilicates and their homologues at ambient temperature, polysiloxane networks were formed at the surface of the irradiated areas of the polymers. No polysiloxane networks were formed at unirradiated areas. The polysiloxane formation rate was affected by the structures of the polymers, imino sulfonates, and silicon compound. The polymer films obtained after irradiation and subsequent CVD treatment with the vapor of tetraalkyl orthosilicates or their homologues showed a good etch resistance to oxygen plasma. The polysiloxane formation at the irradiated surface of the polymers containing imino sulfonates as additives was compared with that of the polymers bearing imino sulfonate units as pendant groups.