Structural and optical analysis of epitaxial GaN on sapphire
Structural and optical analysis of epitaxial GaN on sapphire
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蓝宝石上外延 GaN 的结构和光学分析
DOI：
10.1088/0268-1242/12/5/019
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发表时间：
1997
影响因子：
1.9
通讯作者：
W. Rühle
中科院分区：
文献类型：
--
作者：
U. Strauss;H. Tews;H. Riechert;R. Averbeck;M. Schienle;B. Jobst;D. Volm;T. Streibl;B. Meyer;W. Rühle
我们利用光致发光、光密度和X射线衍射研究了GaN在c面蓝宝石上的外延层。除了从六方GaN的众所周知的发光，我们已经确定了两个发射带从立方GaN。我们观察到的施主束缚激子在立方GaN在3.279 eV的发射。在3.15 - 3.21eV的发光被解释为立方施主-受主复合。相应的受体结合能被发现是低的。对于400 nm厚度的层，光密度产生的立方GaN的平均含量值在10和25%之间。适当的生长条件使这些层的上部区域中的立方含量最小化。
We investigate epitaxial layers of GaN on c-plane sapphire by photoluminescence, optical density and x-ray diffraction. Besides the well known luminescence from hexagonal GaN we have identified two emission bands from cubic GaN. We observe the emission of the donor bound exciton in cubic GaN at 3.279 eV. The luminescence at 3.15 - 3.21 eV is explained as the cubic donor - acceptor recombination. The corresponding acceptor binding energy is found to be low as . For layers of 400 nm thickness, the optical density yield values for the average contents of cubic GaN between 10 and 25%. Proper growth conditions minimize the cubic contents in the upper regions of such layers.