Spatially resolved raman spectroscopy of single- and few-layer graphene

Spatially resolved raman spectroscopy of single- and few-layer graphene
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DOI:
10.1021/nl061702a
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发表时间:
2007-02-01
期刊:
影响因子:
10.8
通讯作者:
Wirtz, L.
Wirtz, L.
中科院分区:
材料科学1区
文献类型:
--
作者:
Graf, D.;Molitor, F.;Wirtz, L.

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我们目前的拉曼光谱测量单层和几层石墨烯片。通过使用扫描共聚焦的方法,我们收集光谱数据的空间分辨率,这使我们能够直接比较拉曼图像与扫描力显微照片。单层石墨烯可以通过D'线的宽度与双层和少层石墨烯区分开来:单层石墨烯的单个峰分裂为双层的不同峰。这些发现解释使用双共振拉曼模型的基础上从头计算的电子结构和声子色散。我们调查了D线强度,并发现在薄片内没有缺陷。源自边缘的有限D线响应可以归因于缺陷或平移对称性的破坏。
We present Raman spectroscopy measurements on single- and few-layer graphene flakes. By using a scanning confocal approach, we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force micrographs. Single-layer graphene can be distinguished from double- and few-layer by the width of the D' line: the single peak for single-layer graphene splits into different peaks for the double-layer. These findings are explained using the double-resonant Raman model based on ab initio calculations of the electronic structure and of the phonon dispersion. We investigate the D line intensity and find no defects within the flake. A finite D line response originating from the edges can be attributed either to defects or to the breakdown of translational symmetry.