Doped silicon nanocrystals from organic dopant precursor by a SiCl4-based high frequency nonthermal plasma
Doped silicon nanocrystals from organic dopant precursor by a SiCl4-based high frequency nonthermal plasma
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DOI：
10.1063/1.4901278
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发表时间：
2014-11
影响因子：
4
通讯作者：
Shu Zhou;Yi Ding;X. Pi;T. Nozaki
中科院分区：
文献类型：
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作者：
Shu Zhou;Yi Ding;X. Pi;T. Nozaki
掺杂硅纳米晶（Si NC）由于其丰富的和无毒的，在要求低成本的纳米器件中引起了极大的兴趣。在这里，我们展示了一种成本有效的气相方法来合成磷（P）掺杂的Si NC，其中使用的前体，即，SiCl 4、亚磷酸三甲酯（TMP）既安全又经济。发现TMP使能的P掺杂不改变Si NC的晶体结构。P掺杂的Si NC的表面被Cl和H终止。发现P掺杂的Si NCs表面的Si-H键密度远高于未掺杂的Si NCs。X射线光电子能谱（XPS）和电子自旋共振（ESR）结果表明，P原子掺杂到了Si-NC核的置换位，并在Si NC中具有电活性。非故意的杂质，例如TMP中所含的碳，不会被引入Si NC中。
Doped silicon nanocrystals (Si NCs) are of great interest in demanding low-cost nanodevices because of the abundance and nontoxicity of Si. Here, we demonstrate a cost-effective gas phase approach to synthesize phosphorous (P)-doped Si NCs in which the precursors used, i.e., SiCl4, trimethyl phosphite (TMP), are both safe and economical. It is found that the TMP-enabled P-doping does not change the crystalline structure of Si NCs. The surface of P-doped Si NCs is terminated by both Cl and H. The Si–H bond density at the surface of P-doped Si NCs is found to be much higher than that of undoped Si NCs. The X-ray photoelectron spectroscopy and electron spin resonance results indicate that P atoms are doped into the substitutional sites of the Si-NC core and electrically active in Si NCs. Unintentional impurities, such as carbon contained in TMP, are not introduced into Si NCs.