First investigation of a novel 2D position-sensitive semiconductor detector concept
First investigation of a novel 2D position-sensitive semiconductor detector concept
复制标题
首次研究新型二维位置敏感半导体探测器概念
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
I. Vila
中科院分区：
文献类型：
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作者：
D. Bassignana;M. Fernandez;R. Jaramillo;M. Lozano;F. J. Muñoz;G. Pellegrini;D. Quirion;I. Vila
本文提出了一种新的二维位置敏感微带探测器的性能的第一次研究，其中的电阻电荷分配方法，通过取代金属电极与多晶硅制成的电阻电极来实现。使用脉冲近红外激光对具有不同电极电阻率值的两个概念验证原型进行表征。将实验数据与耦合到简单电子读出电路的传感器等效电路的电模拟进行了比较。实验和仿真结果之间的良好协议建立在硅微带传感器的电阻电荷划分方法的合理性，并验证了开发的模拟作为未来的传感器原型的优化工具。条带长度方向上的空间分辨率取决于电离事件位置。对于6 MIP信号，从原型分析获得的平均值接近条带长度的1.2%。
This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal.