Femtosecond laser induced nanocone structure and simultaneous crystallization of 1.6 μm amorphous silicon thin film for photovoltaic application
Femtosecond laser induced nanocone structure and simultaneous crystallization of 1.6 μm amorphous silicon thin film for photovoltaic application
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DOI：
10.1088/0022-3727/46/19/195109
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发表时间：
2013-05-15
影响因子：
3.4
通讯作者：
Rusli
中科院分区：
文献类型：
--
作者：
Hong, L.;Wang, X. C.;Rusli
在本文中，我们展示了采用一步飞秒激光退火方法在1.6 μ m厚的非晶硅（a- si）薄膜上结晶和同时形成纳米锥体结构。从拉曼光谱可以看出，a-Si层在退火后结晶。同时，通过扫描电镜和原子力显微镜表征，在不同影响下，激光束辐照形成直径在160 nm ~ 1.4 μ m之间的锥形结构。当样品以588 mJ cm（-2）的激光辐照时，吸收达到最高。该工艺在制备高效、低成本的硅薄膜太阳能电池方面具有潜在的应用前景。此外，还讨论了激光退火过程的物理性质和机理。
In this paper, we have demonstrated the crystallization and simultaneous formation of the nanocone structure on the 1.6 mu m thick amorphous silicon (a-Si) film using a one-step femtosecond laser annealing approach. The a-Si layer is crystallized after the annealing process, as confirmed from their Raman spectra. Meanwhile, the conical structures with diameters ranging from 160 nm to 1.4 mu m are formed upon laser beam irradiation at different fluences, as deduced from scanning electron microscope and atomic force microscope characterization. The highest absorption is achieved when the sample is irradiated with a laser fluence of 588 mJ cm(-2). The developed process has potential applications in the fabrication of high efficiency and low cost Si thin-film solar cells. Moreover, the physics and mechanism involved in the laser annealing process are also discussed.