MEMS-based Pt film temperature sensor on an alumina substrate
MEMS-based Pt film temperature sensor on an alumina substrate
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DOI：
10.1016/j.matlet.2014.03.170
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发表时间：
2014-06-15
影响因子：
3
通讯作者：
Ding, Guifu
中科院分区：
文献类型：
--
作者：
Han, Jie;Cheng, Ping;Ding, Guifu
采用微机电系统（MEMS）工艺在氧化铝衬底上制备了Pt薄膜温度传感器。Pt敏感元件的宽度为10 μ m，厚度为200 nm。在25-900 ℃范围内研究了电阻-温度关系。讨论了退火温度对铂膜传感器初始电阻率和电阻温度系数的影响。实验结果表明，当退火温度低于700 ℃时，初始电阻率随退火温度的升高而降低，这可能与晶粒尺寸的长大和（111）晶面的择优取向有关。随着退火温度的升高，TCR先从1.94 × 10 ~（-3）/℃上升到800 ℃退火的2.40 × 10 ~（-3）/℃，然后下降到900 T退火的2.33 × 10 ~（-3）/℃。绝对平均偏差从刚沉积的膜传感器的26.4 ℃降低到在900 ℃退火的膜传感器的3.4 ℃，这表明膜传感器在900 ℃退火后显示出高精度。(C)2014爱思唯尔有限公司版权所有。
A Pt film temperature sensor was prepared on the alumina substrate using a microelectromechanical system (MEMS) micromachining process. The Pt sensitive element had a width of 10 mu m and a thickness of 200 nm. The resistance-temperature dependence was studied in the range of 25-900 degrees C. The effect of the annealing temperature on the initial resistivity and temperature coefficient of resistance (TCR) of Pt film sensor was discussed. The experimental results indicated that the initial resistivity decreased with increasing the annealing temperature when it was below 700 degrees C, which was probably attributed to the grown grain size and the preferred orientation of (111). With the increase of annealing temperature, TCR first increased from 1.94 x 10(-3)/degrees C of the as-deposited film sensor to 2.40 x 10(-3)/degrees C of the one annealed at 800 degrees C, and then decreased to 2.33 x 10(-3)/degrees C of the one annealed at 900 T. The absolute average deviation decreased from 26.4 degrees C of the as-deposited film sensor to 3.4 degrees C of the one annealed at 900 degrees C, which indicated that the film sensor showed a high accuracy after being annealed at 900 degrees C. (C) 2014 Elsevier B.V. All rights reserved.