The Relation Between Degradation Under DC and RF Stress Conditions
The Relation Between Degradation Under DC and RF Stress Conditions
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直流和射频应力条件下的退化之间的关系
DOI：
10.1109/ted.2011.2153854
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发表时间：
2011
影响因子：
3.1
通讯作者：
J. Bisschop
中科院分区：
文献类型：
--
作者：
A. Scholten;D. Stephens;G. Smit;G. Sasse;J. Bisschop
在本文中，我们开发了一种方法，推导出随时间变化的应力的退化公式的公式恒定偏置的情况下，讨论其局限性，并将其应用到一组射频（RF）应力实验。首先，我们将给出一个新的推导著名的幂律的情况下，没有调用任何特定的物理退化模型。接下来，我们将证明这个推导可以推广到更广泛的g（f（Vi）·t）型退化函数类。我们将说明我们的工作与45纳米的n沟道金属氧化物半导体场效应晶体管的热载流子退化的例子，在RF应力条件下的测量寿命的准确预测是从直流应力下的测量退化。
In this paper, we develop a method to derive degradation formulas for time-varying stress from the formulas for the constant-bias case, discuss its limitations, and apply it to a set of radio-frequency (RF) stress experiments. First, we will give a new derivation of the well-known power-law case without invoking any specific physical degradation model. Next, we will show that this derivation can be generalized to the broader class of degradation functions of type g(f(Vi)·t). We will illustrate our work with an example of hot-carrier degradation in 45-nm n-channel metal-oxide-semiconductor field-effect transistors, where an accurate prediction of the measured lifetime under RF stress conditions is obtained from the measured degradation under direct-current stress.