The impact of triangular defects on electrical characteristics and switching performance of 3.3kV 4H-SiC PiN diode
The impact of triangular defects on electrical characteristics and switching performance of 3.3kV 4H-SiC PiN diode
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三角形缺陷对3.3kV 4H-SiC PiN二极管电特性和开关性能的影响
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
P. Mawby
中科院分区：
文献类型：
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作者：
Y. Bonyadi;P. Gammon;R. Bonyadi;O. Alatise;Ji Hu;S. Hindmarsh;P. Mawby
在这项工作中，探讨了表面形态缺陷，即三角形缺陷对制造的4H-SiC PiN二极管的影响。为了了解它们对电学特性和开关性能的影响，我们有意将二极管制造在具有35 （PiN1）和30 (PiN2) μm 4H-SiC外延层的晶圆上的三角形缺陷上。我们首次展示了三角形缺陷对3.3kV SiC PiN二极管开关特性的影响，并证明三角形缺陷的存在限制了器件的有源面积，并产生了一个短通过漂移区域，这使得泄漏电流比器件的关闭缺陷增加了近3.5 * 10倍。从缺陷处获得的TEM图像证实了这些电学结果。此外，相反的特性表明两种基材都遭受软击穿。结果表明，三角形缺陷的存在不会对器件的载流子寿命产生负面影响。相反，有一些证据（特别是在较低的电流值）表明存储电荷的量增加了。然而，这取决于缺陷与器件的有源面积的比例。
In this work the impact of a surface morphological defect, i e. the triangular defect on fabricated 4H-SiC PiN diodes is explored. Diodes are intentionally fabricated on triangular defects on wafers with 35 (PiN1), and 30 (PiN2) μm 4H-SiC epitaxial layers in order to understand their impact on the resulting electrical characteristics and switching performance. We show for the first time the impact of triangular defects on switching characteristics of 3.3kV SiC PiN diodes fabricated on and off-defects and prove that the existence of triangular defects limit the active area of the devices and creates a short through the drift region, which increases the leakage current by almost 3.5∗10 times than the devices off-defect. TEM images obtained from the defects verified these electrical results. Also, the reverse characteristics show that both substrates suffer from soft breakdown. The switching results show that the presence of triangular defects does not negatively affect the carrier lifetime of devices on-defect. In contrary, there is some evidence (especially in lower current values) that the amount of stored charge is increased. However, this depends on the ratio of defect to the active area of the devices.