A high-density low on-resistance trench lateral power MOSFET with a trench bottom source contact
A high-density low on-resistance trench lateral power MOSFET with a trench bottom source contact
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DOI：
10.1109/ted.2002.801434
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发表时间：
2002-08
影响因子：
3.1
通讯作者：
N. Fujishima;A. Sugi;S. Kajiwara;K. Matsubara;Y. Nagayasu;C. Salama
中科院分区：
文献类型：
--
作者：
N. Fujishima;A. Sugi;S. Kajiwara;K. Matsubara;Y. Nagayasu;C. Salama
提出了一种具有沟槽底源触点的新型沟槽横向功率MOSFET (TLPM/S)，并与具有沟槽底漏触点的等效TLPM （TLPM/D）进行了比较。TLPM/S沿着沟槽的侧壁形成，以减小器件间距，实现单位面积极小的导通电阻。总共使用了8个掩模来制造该设备。由于栅极和沟槽底部源触点是通过自对准沟槽侧壁形成的，因此减小了器件间距。使用0.6 /spl mu/m的线宽，制造的TLPM/S，其器件间距为3.0 /spl mu/m，在击穿电压为73 V时显示出60 m/spl Omega/-mm/sup 2/的特定导通电阻，这接近该电压类别器件的估计硅极限。由于减小了米勒电容，TLPM/S表现出优异的开关性能，并且比等效TLPM/D快约50%。
A novel trench lateral power MOSFET with a trench bottom source contact (TLPM/S) is proposed, fabricated, characterized, and compared with the equivalent TLPM with a trench bottom drain contact (TLPM/D). The TLPM/S is formed along the sidewalls of the trenches so as to reduce the device pitch and realize very small on-resistance per unit area. A total of eight masks are used for fabricating the device. Since the gate electrode and the trench bottom source contact are formed by self-aligning to the trench sidewalls, the device pitch is reduced. Using a line width of 0.6 /spl mu/m, the fabricated TLPM/S, whose device pitch is 3.0 /spl mu/m, exhibits a specific on-resistance of 60 m/spl Omega/-mm/sup 2/ for a breakdown voltage of 73 V, which is close to the estimated silicon limit for this voltage class of devices. Due to reduced Miller capacitance, the TLPM/S exhibits excellent switching performance, and is approximately 50% faster than the equivalent TLPM/D.