Tuning the electronic property of two dimensional SiSe monolayer by in-plane strain
Tuning the electronic property of two dimensional SiSe monolayer by in-plane strain
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通过面内应变调节二维 SiSe 单层的电子特性
DOI：
10.1016/j.cplett.2018.05.042
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发表时间：
2018-08-01
影响因子：
2.8
通讯作者：
Zhong, Jianxin
中科院分区：
文献类型：
--
作者：
Mao, Yuliang;Ben, Jiao;Zhong, Jianxin
采用第一性原理计算方法，研究了面内应变作用下SiSe单层膜的电子性质。发现在沿着扶手椅方向的拉伸应变作用下，SiSe单层膜的带隙线性增加。沿沿着Z字形方向的7%的拉伸应变使带隙由间接带隙转变为直接带隙。在双轴压缩应变从0%到-5%的范围内，我们发现SiSe单层膜的带隙不断减小。此外，SiSe单层膜在-5%双轴压缩应变下表现出金属行为。(C)2018爱思唯尔B. V.保留所有权利。
Using first-principles calculations, the electronic properties of SiSe monolayer under in-plane strains are studied. It is found that the band gap of SiSe monolayer is increased linearly under the tensile strains along armchair direction. The tensile strain of 7% along zigzag direction makes a transition of band gap from indirect to direct. Under the biaxial compressive strains from 0% to -5%, we found that the band gap of SiSe monolayer is decreased continuously. Moreover, the SiSe monolayer exhibits metallic behavior under the -5% biaxial compressive strain. (C) 2018 Elsevier B.V. All rights reserved.