Raman and cathodoluminescence study of dislocations in GaN
Raman and cathodoluminescence study of dislocations in GaN
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DOI：
10.1063/1.1518793
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发表时间：
2002-11
影响因子：
3.2
通讯作者：
H. Lei;H. Leipner;J. Schreiber;J. Weyher;T. Wosinski;I. Grzegory
中科院分区：
文献类型：
--
作者：
H. Lei;H. Leipner;J. Schreiber;J. Weyher;T. Wosinski;I. Grzegory
用拉曼显微镜和阴极发光显微镜研究了氮化镓单晶中新产生和生长的位错的结构和光学性质。由微压痕引起的高密度位错伴随着固有点缺陷的产生。大量的vga杂质配合物是导致自由电子浓度降低和压痕周围黄色发光增强的原因。拉曼散射和CL显示了变形引起的压应力。生长中的位错被点缺陷气氛修饰，导致位错周围自由载流子浓度的降低。
Structural and optical properties of freshly created and in-grown dislocations in GaN single crystal are investigated by Raman and cathodoluminescence (CL) microscopy. The introduction of a high density of dislocations by micro-indentation is accompanied by the generation of intrinsic point defects. A high amount of VGa–impurity complexes is responsible for the decrease in the free electron concentration and the enhanced yellow luminescence around the indentation. A compressive stress induced by deformation is revealed by Raman scattering and CL. In-grown dislocations are decorated with a point defect atmosphere, leading to a reduction in the free carrier concentration around the dislocation.