GaN/AlGaN p-channel inverted heterostructure JFET
GaN/AlGaN p-channel inverted heterostructure JFET
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GaN/AlGaN p 沟道反向异质结构 JFET
DOI：
10.1109/led.2002.801295
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发表时间：
2002
影响因子：
4.9
通讯作者：
M. Asif Khan
中科院分区：
文献类型：
--
作者：
M. Shatalov;G. Simin;Jianping Zhang;V. Adivarahan;A. Koudymov;R. Pachipulusu;M. Asif Khan
提出并实现了一种新型n/sup +/-型栅GaN/AlGaN p沟道反向异质结场效应晶体管（HJFET）。采用一种新的超晶格辅助应变补偿技术制备了高质量的GaN/AlGaN p-n结。p沟道HJFET栅极漏电流低于10 nA，阈值电压为8 V，接近典型的n沟道HFET。这种新的HJFET器件为制造氮化物基互补集成电路开辟了一条道路。
A novel GaN/AlGaN p-channel inverted heterostructure junction field-effect transistor (HJFET) with a n/sup +/-type gate is proposed and demonstrated. A new superlattice aided strain compensation techniques was used for fabricating high quality GaN/AlGaN p-n junction. The p-channel HJFET gate leakage current was below 10 nA, and the threshold voltage was 8 V, which is close to that of typical n-channel HFETs. This new HJFET device opens up a way for fabricating nitride based complimentary integrated circuits.