Modulation of domain wall dynamics in TbFeCo single layer nanowire
Modulation of domain wall dynamics in TbFeCo single layer nanowire
复制标题
TbFeCo 单层纳米线中畴壁动力学的调制
DOI：
10.1063/1.4704395
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
H. Awano
中科院分区：
文献类型：
--
作者：
Duc;Kotaro Ikeda;H. Awano
我们展示了在TbFeCo单层纳米线（300 nm宽，150 $\mu$m长）中写入和调制磁畴壁的可能性。为了实现这一点，通过1.6 MHz脉冲电流（振幅为35 mA，长度为5-40 ns）穿过导线产生的奥斯特场形成一个微小的磁畴。根据自旋传递转矩机制，利用直流电流将成核畴（两侧有两个壁）驱动到导线上，将壁写入导线中。临界电流密度为$J_c = 3.5\times10^{10} Am^{-2}$，以控制导线中壁的运动。研究发现，外场和成核脉冲电流的长度都可以调节金属丝中运动畴的大小。这对于畴壁自旋力矩器件，特别是存储元件的写入过程来说是一个重要的注意事项。
We demonstrate the possibility to write and modulate the magnetic domain walls in a TbFeCo single layer nanowire (300 nm width, 150 $\mu$m length). To realize this, a tiny magnetic domain was nucleated by an Oersted field produced by a 1.6 MHz pulse current (35 mA in amplitude, 5-40 ns in length) crossed the wire. To write the wall to the wire, a DC current was used to drive the nucleated domain (with two walls in two sides) to the wire in accordance with spin-transfer torque mechanism. A critical current density of $J_c = 3.5\times10^{10} Am^{-2}$ was required to control the motion of the walls in the wire. It was found that the size of the domain moving in the wire could be adjusted by either external field or the length of the nucleated pulse current. This could be considered as an important note for writing process in domain wall spin-torque devices, especially, memory elements.
影响因子：
56.9
作者：
Thomas, Luc;Moriya, Rai;Parkin, Stuart S. P.
通讯作者：
Parkin, Stuart S. P.
影响因子：
2.3
作者：
Chiba, Daichi;Yamada, Gen;Ono, Teruo
通讯作者：
Ono, Teruo