Properties of Hopfield model with the zero-order synaptic decay
Properties of Hopfield model with the zero-order synaptic decay
复制标题
零阶突触衰减的 Hopfield 模型的性质
DOI：
10.1007/s10015-012-0033-5
复制
发表时间：
2012
影响因子：
0.9
通讯作者：
Koji Kurata
中科院分区：
文献类型：
--
作者：
Ryota Miyata;Toru Aonishi;Jun Tsuzurugi;Koji Kurata
本文利用抽象联想记忆模型、零级突触衰变的Hopfield模型，研究了突触发生对大脑记忆的影响。通过数值模拟，我们论证了突触发生在维持嵌入网络的近期记忆的同时避免过载的可能性。对于1000个单元组成的网络，避免超载的最小衰减率为0.02，最大化存储容量的最佳衰减率为0.08。我们还表明，与这两个值对应的每个学习步骤的平均替换突触数量分别为1,187和21024个。
In this paper, we investigate the effect of synaptogenesis on memories in the brain, using the abstract-associative memory model, Hopfield model with the zero-order synaptic decay. Using the numerical simulation, we demonstrate the possibility that synaptogenesis plays a role in maintaining recent memories embedded in the network while avoiding overloading. For the network consisting of 1000 units, it turned out that the minimum decay rate to avoid overloading is 0.02, and the optimal decay rate to maximize the storage capacity is 0.08. We also show that the average numbers of replacement synapses at each learning step corresponding to these two values are 1187 and 21024, respectively.