IMPREGNATED SEMICONDUCTOR SCINTILLATOR
IMPREGNATED SEMICONDUCTOR SCINTILLATOR
复制标题
浸渍半导体闪烁体
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
S. Luryi
中科院分区：
文献类型：
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作者：
S. Luryi
讨论了一种半导体闪烁型伽玛辐射探测器，该探测器在伽玛射线吸收半导体体上浸染了多个带隙比体略窄的小的直接间隙半导体内含物。如果它们之间的典型距离小于载体材料中载流子的扩散长度，则光产生的电子和空穴将在浸染物内部重新结合并产生闪烁辐射，对这种辐射，宽间隙体基本上是透明的。用这种方法可以实现线性尺寸超过10厘米的半导体闪烁体。
A semiconductor scintillation-type gamma radiation detector is discussed in which the gamma-ray absorbing semiconductor body is impregnated with multiple small direct-gap semiconductor inclusions of bandgap slightly narrower than that of the body. If the typical distance between them is smaller than the diffusion length of carriers in the body material, the photo-generated electrons and holes will recombine inside the impregnations and produce scintillating radiation to which the wide-gap body is essentially transparent. In this way it is possible to implement a semiconductor scintillator of linear dimensions exceeding 10 cm.