T.Noda, et al.: "Doping and Electrical Characteristics of In Situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Grown Using Ultraclean LPCVD"Abs. of 2000 Spring Meeting, The European Materials Research Society. (accepted). (2000)
T.Noda, et al.: "Doping and Electrical Characteristics of In Situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Grown Using Ultraclean LPCVD"Abs. of 2000 Spring Meeting, The European Materials Research Society. (accepted). (2000)
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T.Noda 等人：“使用超净 LPCVD 外延生长的原位重 B 掺杂 Si_<1-x-y>Ge_xC_y 薄膜的掺杂和电气特性”Abs。
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