(Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV
(Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV
复制标题
（特邀）多通道 AlGaN/GaN 功率整流器：高达 10 kV 的突破性性能
DOI：
10.1149/10404.0051ecst
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Cheng, Kai
中科院分区：
文献类型：
--
作者：
Zhang, Yuhao;Xiao, Ming;Ma, Yunwei;Du, Zhonghao;Wang, Han;Xie, Andy;Beam, Edward;Cao, Yu;Cheng, Kai
高压整流器广泛应用于可再生能源处理、电网、工业电机驱动、脉冲电源系统等领域。今天的高压整流器市场由6.5 kV以下的双极硅二极管主导，其反向恢复缓慢。宽带隙SiC单极二极管已经预商业化，最高可达10 kV，这允许更高的开关速度。最近，我们开发了基于多通道AlGaN/GaN平台的新一代高压整流器，该平台突出了一系列新颖的器件设计，包括堆叠二维电子气（2DEG）通道，pn结和3-D鳍结构。通过这些创新，我们的单极1.2-10 kV多通道AlGaN/GaN肖特基整流器的性能远远超过了Si和SiC的1-D限制，同时与SiC相比具有更低的成本。本文综述了我们在这些GaN器件的设计、制造和表征方面所做的努力。我们的研究结果显示了氮化镓在中压和高压电力电子应用中的巨大前景。
High-voltage power rectifiers are widely used in renewable energy processing, electric grids, industrial motor drives, pulse power systems, among other applications. Today’s high-voltage rectifier market is dominated by bipolar Si diodes up to 6.5 kV, which suffer from slow reverse recovery. Wide-bandgap SiC unipolar diodes have been pre-commercialized up to 10 kV, which allows for a much higher switching speed. Recently, we have developed a new generation of high-voltage rectifiers based on the multichannel AlGaN/GaN platform, which highlight a series of novel device designs incorporating the stacked two-dimensional electron gas (2DEG) channels, pn junctions, and 3-D fin structures. With these innovations, the performances of our unipolar 1.2-10 kV multi-channel AlGaN/GaN Schottky rectifiers well exceed the Si and SiC 1-D limit, at the same time possessing a lower cost as compared to SiC counterparts. This paper reviews our efforts in the design, fabrication and characterization of these GaN devices. Our results show the tremendous promise of GaN for medium-voltage and high-voltage power electronics applications.