High-Yield Transfer Printing of Metal-Insulator-Metal Nanodiodes
High-Yield Transfer Printing of Metal-Insulator-Metal Nanodiodes
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DOI：
10.1021/nn3004058
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发表时间：
2012-03-01
期刊：
影响因子：
17.1
通讯作者：
Lugli, Paolo
中科院分区：
文献类型：
--
作者：
Bareiss, Mario;Ante, Frederik;Lugli, Paolo
纳米级金属-绝缘体-金属（MIM）二极管代表电子电路、检测器、通信和能源领域中的重要器件，因为它们的截止频率可以延伸到电子微波范围和光学长波红外范围之间的“间隙”。在本文中，我们提出了一种纳米转移印刷方法，该方法可以有效地同时制造MIM纳米二极管堆栈的大规模阵列，从而提供了低成本大规模生产的可能性。在以前的工作中，我们已经证明了宏观结构的成功转移和电特性。在这里，我们首次展示了使用温度增强工艺的单个转印步骤制造数百万纳米级二极管。使用导电原子力显微镜（AFM）设置来执行个别MIM纳米二极管的电表征。我们的分析表明，隧穿电流是占主导地位的导电机制，和电气测量数据与先前制造的微尺度二极管和数值模拟的实验数据吻合良好。
Nanoscale metal-insulator-metal (MIM) diodes represent important devices in the fields of electronic circuits, detectors, communication, and energy, as their cutoff frequencies may extend into the "gap" between the electronic microwave range and the optical long-wave infrared regime. In this paper, we present a nanotransfer printing method, which allows the efficient and simultaneous fabrication of large-scale arrays of MIM nanodiode stacks, thus offering the possibility of low-cost mass production. In previous work, we have demonstrated the successful transfer and electrical characterization of macroscopic structures. Here, we demonstrate for the first time the fabrication of several millions of nanoscale diodes with a single transfer-printing step using a temperature-enhanced process. The electrical characterization of individual MIM nanodiodes was performed using a conductive atomic force microscope (AFM) setup. Our analysis shows that the tunneling current is the dominant conduction mechanism, and the electrical measurement data agree well with experimental data on previously fabricated microscale diodes and numerical simulations.