A lens-integrated 430 GHz SiGe HBT source with up to −6.3 dBm radiated power
A lens-integrated 430 GHz SiGe HBT source with up to −6.3 dBm radiated power
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DOI：
10.1109/rfic.2017.7969042
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发表时间：
2017-06
期刊：
影响因子：
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通讯作者：
P. Hillger;J. Grzyb;S. Malz;B. Heinemann;U. Pfeiffer
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文献类型：
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作者：
P. Hillger;J. Grzyb;S. Malz;B. Heinemann;U. Pfeiffer
本文介绍了采用 0.13 µm SiGe BiCMOS 技术实现的 430 GHz 源，fT/fmax 为 300 GHz/450 GHz。该源包括一个 215 GHz 的基本差分 Colpitts 共源共栅振荡器，驱动一个平衡的共集电极倍频器，该倍频器利用发射极输出处的感应二次谐波反馈来增强生成的二次谐波电流。该倍频器与透镜耦合片上圆形缝隙天线共同设计，为倍频器输出提供适当的输入阻抗。与直径 3 毫米的硅透镜结合使用时，总峰值辐射功率为 -6.3 dBm，功耗为 165 mW。据作者所知，所提供的源显示了超过 350 GHz 的任何硅基单元件散热器的最高报告功率。
This paper presents a 430 GHz source implemented in a 0.13-µm SiGe BiCMOS technology with fT/fmax of 300 GHz/450 GHz. The source comprises a fundamental differential Colpitts cascode oscillator at 215 GHz driving a balanced common-collector doubler that utilizes inductive 2nd-harmonic feedback at the emitter output in order to boost the generated 2nd-harmonic current. The doubler is co-designed with a lens-coupled on-chip circular slot antenna providing the appropriate input impedance to the doubler output. In combination with a 3-mm diameter silicon-lens, the total peak radiated power is −6.3 dBm at a power dissipation of 165 mW. To the authors knowledge, the presented source shows the highest reported power for any silicon-based single-element radiator beyond 350 GHz.