Selective area growth of GaN using gas source molecular beam epitaxy
Selective area growth of GaN using gas source molecular beam epitaxy
复制标题
使用气源分子束外延选择性区域生长 GaN
DOI：
10.1007/s11664-000-0071-y
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发表时间：
2000
影响因子：
2.1
通讯作者：
G. Wicks
中科院分区：
文献类型：
--
作者：
V. K. Gupta;K. Averett;M. Koch;B. McIntyre;G. Wicks
考察了不同表面的氨裂解效率。以下是根据其氨裂解效率排列的表面顺序：GaN（最高），Si3N4, SiO2（最低）。利用氨基分子束外延技术，在之前生长在蓝宝石衬底上的GaN上沉积SiO2掩膜，实现了GaN的选择性区域生长。在800℃的生长温度下，氮化镓在图像化SiO2/GaN上的生长具有很强的选择性。在800°C下生长时，在窗口区域生长质量良好，掩膜表面没有沉积，而在700°C下生长时，SiO2掩膜上积累了一些沉积。横向生长速率与垂直生长速率之比≤1。
Ammonia cracking efficiencies on various surfaces were examined. The following is an ordering of surfaces according to their ammonia cracking efficiencies: GaN (highest), Si3N4, SiO2 (lowest). Selective area growth of GaN was performed over SiO2 masks deposited on GaN previously grown on sapphire substrates using ammonia-based molecular beam epitaxy. GaN growth on patterned SiO2/GaN is very selective at a growth temperature of 800°C. Good quality growth occurs in the window region with no deposits on the mask surface when growth is performed at 800°C, whereas some deposits on the SiO2 masks accumulate when growth is performed at 700°C. The ratio of lateral growth rate to vertical growth rate is ≤1.