CORROSION OF III-V-COMPOUNDS - A COMPARATIVE-STUDY OF GAAS AND INP .1. ELECTROCHEMICAL CHARACTERIZATION BASED ON TAFEL PLOT MEASUREMENTS
CORROSION OF III-V-COMPOUNDS - A COMPARATIVE-STUDY OF GAAS AND INP .1. ELECTROCHEMICAL CHARACTERIZATION BASED ON TAFEL PLOT MEASUREMENTS
复制标题
DOI：
10.1016/0022-0728(91)87036-4
复制
发表时间：
1991-10-25
影响因子：
4.5
通讯作者：
BLONKOWSKI, S
中科院分区：
文献类型：
--
作者：
ALLONGUE, P;BLONKOWSKI, S
本文采用Tafel图测量和n型和p型电极比较相结合的实验方法，对GaAs和InP的腐蚀动力学和机理进行了定量研究。在这项工作（第一部分）中，这种方法的有效性的动机和限制进行了详细讨论沿着与实验结果的描述。结果表明，在各种电化学条件下，（在下文中通过与金属基底类比而称为“塔菲尔图记录”）是一种非常强大的技术，对接触的许多参数敏感，例如（i）溶液的pH，（ii）电极的掺杂密度，（iii）电极传导的类型（n型或p型）以及自然地（iv）材料本身。本工作为半导体/电解质结的电化学研究带来了新的见解，并与金属电极的电化学平行。本部分仅介绍结果。第二部分将讨论GaAs和InP的表面电化学和化学性质。
The kinetics and mechanism of corrosion of GaAs and InP have been investigated quantitatively by means of a combined experimental approach based principally on (i) Tafel plot measurements and (ii) the comparison of n- and p-type electrodes of the same material. In this work (Part I), the motivations and the limit of validity of this approach are discussed in detail along with the description of experimental results. It is shown that an extensive determination of the flat band potential under various electrochemical conditions (called in the following "Tafel plot recording" by analogy with metal substrates) is a very powerful technique, sensitive to a number of parameters of the contact such as (i) the pH of the solution, (ii) the doping density of the electrode, (iii) the type of electrode conduction (n- or p-type) and naturally (iv) the material itself. The present work brings new insight into electrochemical studies of the semiconductor/electrolyte junction and makes a parallel with the electrochemistry with metal electrodes. This part presents only the results. Part II will cover the discussion in relation to the surface electrochemical and chemical properties of GaAs and InP.