Progress in extreme ultraviolet interferometric lithography at the University of Wisconsin
Progress in extreme ultraviolet interferometric lithography at the University of Wisconsin
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威斯康星大学在极紫外干涉光刻方面取得进展
DOI：
10.1117/12.772681
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
F. Cerrina
中科院分区：
文献类型：
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作者：
A. Isoyan;Yang;F. Jiang;J. Wallace;M. Efremov;P. Nealey;F. Cerrina
极紫外线干涉光刻（EUV-IL）可以产生周期性图案，用于表征光致抗蚀剂材料和创建自组装几何形状的模板。纳米技术中心开发了一种新型的EUV-IL光束线，专门用于使用威斯康星大学麦迪逊分校阿拉丁储存环上的波荡器辐射进行纳米图案化。光束线和EUV-IL系统于2006年投入使用;我们已经完成了几项表征研究，并修改了几个关键部件，以提高分辨率和可用性。EUV-IL系统可以同时曝光不同的间距，在晶圆上产生半间距范围从55 nm到20 nm甚至更小的图案。我们还可以通过执行双重曝光来引入可变图像调制，使干涉图案与传输的零阶重叠。最近，我们已经证明了到20纳米的半间距印刷IL图像在PMMA抗蚀剂。
Extreme Ultraviolet Interferometric lithography (EUV-IL) can generate periodic patterns useful to characterize photoresist materials and to create templates for self-assembled geometries. The Center for NanoTechnology has developed a novel EUV-IL beamline dedicated to nanopatterning using radiation from an undulator on the Aladdin storage ring at the University of Wisconsin-Madison. The beamline and the EUV-IL system were commissioned in 2006; we have completed several characterization studies, and modified several key components to improve resolution and usability. The EUV-IL system can expose different pitches at the same time producing patterns with a range of halfpitch from 55nm down to 20nm and less on the wafer. We can also introduce a variable image modulation by performing double exposures, overlapping the interference pattern with the transmitted zero order. Recently we have demonstrated down to 20nm half-pitch printed IL image in PMMA resist.