Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications
Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications
复制标题
用于高性能非易失性存储器应用的 HfO2 薄膜的缺陷态和电荷捕获特性
DOI：
10.1063/1.4900745
复制
发表时间：
2014-10-27
影响因子：
4
通讯作者：
Dai, J. Y.
中科院分区：
文献类型：
--
作者：
Zhang, Y.;Shao, Y. Y.;Dai, J. Y.
在这项工作中，我们提出了金属-氧化铪-SiO2-Si (MHOS) 结构的显着电荷捕获记忆效应。基于 800 摄氏度退火 HfO2 薄膜的器件在 +/- 10V 扫描电压下表现出类似于 5.1V 的大存储窗口，并且具有出色的电荷保留特性，在保留超过 10 4 s 后，电荷损失仅约为 2.6%。出色的存储特性归因于 HfO2 薄膜中高密度的深缺陷态。我们通过光致发光和光致发光激发测量研究了 HfO2 薄膜中的缺陷态，发现缺陷态分布在导带以下 1.1 eV 至 2.9 eV 的深能级中。我们的工作为基于 HfO2 的 MHOS 器件的电荷捕获机制提供了进一步的见解。 (C) 2014 AIP 出版有限责任公司。
In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO2-Si (MHOS) structure. The devices based on 800 degrees C annealed HfO2 film exhibit a large memory window of similar to 5.1V under +/- 10V sweeping voltages and excellent charge retention properties with only small charge loss of similar to 2.6% after more than 10 4 s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO2 films. We investigated the defect states in the HfO2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO2 based MHOS devices. (C) 2014 AIP Publishing LLC.