Electrical Properties of Microcrystalline Sc3N@C80 Fullerene
Electrical Properties of Microcrystalline Sc3N@C80 Fullerene
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微晶Sc3N@C80富勒烯的电性能
DOI：
10.1007/s00339-012-7449-6
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
Kenta Kirimoto and Yong Sun
中科院分区：
文献类型：
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作者：
Tsuyoshi Takase;Masamichi Sakaino;Kenta Kirimoto and Yong Sun
通过直流电导率温度特性和交流电导率温度特性研究了具有面心立方结构的微晶Sc_3N@C_（80）富勒烯的电学性质。阻抗在450 K以下，Sc3N@C80样品具有1.71 eV的能带隙，其不依赖于所施加的电场的强度。但当温度高于450 K时，在大于1 kV/cm的电场强度下发生相变，导致1.22 eV的小带隙。我们还发现，从科尔-科尔图的交流。在Au/Sc3N@C80界面处的接触电阻小于在Au/C60界面处的接触电阻。
The electrical properties of microcrystalline Sc3N@C80fullerene with fcc structure are studied by measuring both d.c. conductivity temperature dependence and a.c. impedance. Below 450 K the Sc3N@C80sample has an energy band gap of 1.71 eV, which does not depend on the strength of the applied electric field. But when the temperature is above 450 K, a phase transition which results in a small band gap of 1.22 eV occurs under electric field strengths larger than 1 kV/cm. We also found from Cole–Cole plots of a.c. impedance that the contact resistance at the Au/Sc3N@C80interface is less than that at the Au/C60interface.