Structural relaxation and self-diffusion in covalent amorphous solids: Silicon nitride as a model system
Structural relaxation and self-diffusion in covalent amorphous solids: Silicon nitride as a model system
复制标题
共价非晶固体中的结构弛豫和自扩散：氮化硅作为模型系统
DOI：
10.1063/1.2770821
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发表时间：
2007
影响因子：
3.2
通讯作者：
M. Bruns
中科院分区：
文献类型：
--
作者：
H. Schmidt;W. Gruber;T. Gutberlet;M. Ay;J. Stahn;U. Geckle;M. Bruns
Neutron reflectometry and isotope multilayers were used to investigate self-diffusion in covalent amorphous solids during isothermal annealing and its correlation to structural relaxation. Amorphous silicon nitride was chosen as a model system. Neutron reflectometry is a superior method to measure very low self-diffusivities, occurring in covalent solids, by applying only short time anneals. This allows one to determine time dependent changes of diffusivity over a broad temperature range before crystallization of the metastable solid occurs. The measured nitrogen diffusivities decrease by more than one order of magnitude during annealing between 950 and 1150 °C, while at the same time also a decrease of the atomic density is observed. We interpret this behavior as a structural relaxation of the amorphous network structure that is governed by annihilation of interstitial-like defects.
