Development of a platinum resistance thermometer on the silicon substrate for phase change studies
Development of a platinum resistance thermometer on the silicon substrate for phase change studies
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DOI：
10.1088/0960-1317/22/8/085012
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发表时间：
2012-08
影响因子：
2.3
通讯作者：
Q. Cai;Ya-Chi Chen;Chialun Tsai;J. DeNatale
中科院分区：
文献类型：
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作者：
Q. Cai;Ya-Chi Chen;Chialun Tsai;J. DeNatale
电阻温度探测器是传热学研究中常用的测量传感器。在许多电阻温度探测器中，铂电阻温度计(PRT)具有化学稳定性好、温度测量范围宽、测量精度高等优点。在用于微电子热管理的双孔结构碳纳米管的相变研究中，用10 nm钛粘合剂在硅衬底上开发了100 nm厚的PRT，以实现精确的、无界面的温度测量。经过375°C的热处理后，在20°C到180°C的温度范围内对PRT样品进行校准。在热循环中出现温度测量滞后。在所有加热期间，电阻都趋于较低，这使得最大测量偏差为10°C。两种不同薄膜PRT的实验结果表明，通过降低加热速度或使用冷却期间的数据，可以实现准确和可重复的温度测量。
Resistance temperature detectors are commonly used measurement sensors in heat transfer studies. In many resistance temperature detectors, the platinum resistance thermometer (PRT) is chemically stable, has a wide temperature measurement range and possesses high measurement accuracy. In phase change studies of carbon nanotubes, bi-porous structures for microelectronic thermal management, 100 nm thick PRTs are developed on silicon substrates with 10 nm titanium adhesive to achieve precise and interface-free temperature measurements. After an annealing at 375 °C, the PRT samples are calibrated at a temperature range from 20 to 180 °C. Measurement hysteresis of temperature appears in thermal cycles. Electrical resistance tends to become low during all heating periods, which establishes the maximum measurement deviation of 10 °C. Experimental results from two different thin-film PRTs indicate that accurate and repeatable temperature measurements can be achieved by either reducing heating speed or using data in the cooling period.