Punch-through in short-channel AlGaN/GaN HFETs
Punch-through in short-channel AlGaN/GaN HFETs
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DOI：
10.1109/ted.2005.862702
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发表时间：
2006-01
影响因子：
3.1
通讯作者：
M. Uren;K. Nash;R. Balmer;T. Martin;E. Morvan;N. Caillas;S. Delage;D. Ducatteau;B. Grimbert
中科院分区：
文献类型：
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作者：
M. Uren;K. Nash;R. Balmer;T. Martin;E. Morvan;N. Caillas;S. Delage;D. Ducatteau;B. Grimbert
短沟道穿通效应在0.17 /spl μ/m栅长AlGaN/GaN单异质结场效应晶体管中得到证实。这些表现为高输出电导和夹断电压对漏极电压的强烈依赖。模拟结果表明，它们可以解释为在AlGaN/GaN界面处的电荷限制不佳，导致GaN层的大部分内的电流流动。这是由于在绝缘GaN缓冲层中仅存在/spl sim/1.5/spl times/10/sup 16/ cm/sup-3/ deep能级的浓度而引起的。发现需要约10/sup 17/ cm/sup-3/的净受主密度来确保短沟道效应的抑制。
Short-channel punch-through effects are demonstrated in 0.17 /spl mu/m gate length AlGaN/GaN single heterojunction field-effect transistors. These take the form of a high output conductance and the strong dependence of pinch-off voltage on drain voltage. It is shown by simulation that they can be explained by poor confinement of charge at the AlGaN/GaN interface resulting in current flow within the bulk of the GaN layer. This is caused by there being a concentration of only /spl sim/1.5/spl times/10/sup 16/ cm/sup -3/ deep levels in the insulating GaN buffer layer. It is found that a net acceptor density of around 10/sup 17/ cm/sup -3/ is required to ensure suppression of short-channel effects.