Hot hole transport in a-Si/c-Si heterojunction solar cells
Hot hole transport in a-Si/c-Si heterojunction solar cells
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a-Si/c-Si 异质结太阳能电池中的热空穴传输
DOI：
10.1109/pvsc.2014.6925443
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
S. Goodnick
中科院分区：
文献类型：
--
作者：
P. Muralidharan;K. Ghosh;D. Vasileska;S. Goodnick
a-Si/c-Si 异质结太阳能电池中光生少数载流子的传输行为取决于撞击异质界面的载流子的能量分布函数 (EDF)。界面处的高场区域导致入射在表面上的空穴的强烈非麦克斯韦分布，这对电流收集有影响并对器件的整体效率产生重大影响。这项工作通过蒙特卡罗模拟和缺陷辅助传输分析相结合，研究了异质界面处高场传输对光生载流子的影响。采用三能带扭曲非抛物线能带模型来描述价带，以便准确地表示高能光载流子。此外，通过考虑通过隧道效应捕获缺陷、通过普尔-弗兰克尔效应发射和通过隧道效应发射等机制，渗流路径理论还被应用于研究本征非晶区中的缺陷辅助输运。
The transport behavior of photogenerated minority carriers in an a-Si/c-Si heterojunction solar cell is dependent on the energy distribution function (EDF) of the carriers impinging on the hetero-interface. The high field region at the interface results in a strongly non-Maxwellian distribution of holes incident on the surface, which has implications for current collection and a significant impact on the overall efficiency of the device. This work studies the effect of the high field transport on photogenerated carriers at the hetero-interface through a combination of Monte Carlo simulations and analysis of defect assisted transport. A three band warped non-parabolic band model is implemented to describe the valence band in order to accurately represent high energy photocarriers. Also, percolation path theory is applied to study defect assisted transport in the intrinsic amorphous region by considering mechanisms such as defect capture through tunneling, emission through Poole - Frenkel effect, and emission through tunneling.