Device Processing of Silicon Carbide
Device Processing of Silicon Carbide
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DOI：
10.1002/9781118313534.ch6
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发表时间：
2014-09
期刊：
影响因子：
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通讯作者：
T. Kimoto;J. Cooper
中科院分区：
文献类型：
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作者：
T. Kimoto;J. Cooper
制造复杂的电子器件需要许多工艺步骤，包括离子注入掺杂、图案化、刻蚀、氧化、钝化和金属化。制造碳化硅器件的工艺流程与硅工艺相似，但由于碳化硅独特的物理化学性质，还需要几种独特的工艺，并有特殊的要求。本章介绍了离子注入、刻蚀、氧化、界面钝化、肖特基接触和欧姆接触等方面的基本内容和技术进展。
Many processing steps are required to fabricate complex electronic devices, including doping by ion implantation, patterning, etching, oxidation, passivation, and metallization. The process flow in SiC device fabrication is similar to that in silicon technology but several unique processes, with particular requirements, are also needed because of the unique physical and chemical properties of SiC. This chapter introduces the fundamental aspects and technological development of ion implantation, etching, oxidation, interface passivation, and Schottky and ohmic contacts in SiC.