Progress in lead-based ferroelectric and antiferroelectric single crystals: composition modification, crystal growth and properties

Progress in lead-based ferroelectric and antiferroelectric single crystals: composition modification, crystal growth and properties
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DOI:
10.1039/c2ce06430h
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发表时间:
2012-06
期刊:
影响因子:
3.1
通讯作者:
Nengneng Luo;Yuanyuan Li;Z. Xia;Qiang Li
Nengneng Luo;Yuanyuan Li;Z. Xia;Qiang Li
中科院分区:
化学3区
文献类型:
--
作者:
Nengneng Luo;Yuanyuan Li;Z. Xia;Qiang Li

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具有复杂钙钛矿结构的铁电和反铁电材料由于其独特的结构和性质而引起了人们的广泛兴趣。本文综述了这两类材料的最新研究进展,重点介绍了压电/铁电和反铁电单晶材料,因为它们具有超高的电性能,具有很好的应用前景。由Pb(Mg 1/3 Nb 2/3)O3-PbTiO 3(PMN-PT)表示的弛豫铁电单晶在接近准同型相界(MPB)的成分下具有高压电常数d33(>2000 pC N-1)和机电耦合因子k33(90-92%)。然而,远低于居里温度Tc的低铁电相变温度Tr-t限制了其在宽温度范围内的进一步应用。本文介绍了Pb(Mg_(1/3)Nb_(2/3))O_3-PbZrO_3-PbTiO_3(PMN-PZ-PT)和Pb(Mg_(1/3)Nb_(2/3))O_3-Pb(Fe_(1/2)Nb_(1/2))O_3-PbTiO_3(PMN-PFN-PT)赝三元系的设计工作,着重讨论了赝三元系的成分调整和晶体生长。此外,对于以(Pb,La)(Zr,Sn,Ti)O_3(PLZST)为代表的弛豫型反铁电体,由于其不一致的熔化,很难生长大块的高质量单晶。本文还介绍了我们近年来在助熔剂法生长PLZST单晶方面所做的研究,特别是助熔剂的选择、成分的优化和单晶缺陷的分析。
Ferroelectric and antiferroelectric materials, with complex perovskite structures, have experienced wide interest due to their peculiar structure and properties. In this highlight, recent advances of these two types of materials are reviewed, with particular emphasis on piezoelectrics/ferroelectric and antiferroelectric single crystals, owing to their ultra-high electric properties for practical application. Relaxor ferroelectric single crystals, represented by Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) at compositions near the morphotropic phase boundary (MPB), possess a high piezoelectric constant d33 (>2000 pC N−1) and electromechanical coupling factors k33 (90–92%). However, a low ferroelectric phase transition temperature Tr-t, far below the Curie temperature Tc restricts its further application in a broad temperature range. Some work on the design of a new pseudo-ternary system of Pb(Mg1/3Nb2/3)O3–PbZrO3–PbTiO3 (PMN-PZ-PT) and Pb(Mg1/3Nb2/3)O3–Pb(Fe1/2Nb1/2)O3–PbTiO3 (PMN-PFN-PT) have been demonstrated with emphasis on the composition modification and crystal growth. Moreover, for relaxor antiferroelectrics represented by (Pb,La)(Zr,Sn,Ti)O3 (PLZST) it is very difficult to grow bulk and high quality single crystals because of its incongruent melting. Our recent investigations on the flux growth of PLZST single crystals, especially the flux selection, compositions optimization, and defect analysis of as-grown single crystals are also described in this highlight.