MOVPE Growth and Optical Characterization of GaPN Metastable Alloy Semiconductor
MOVPE Growth and Optical Characterization of GaPN Metastable Alloy Semiconductor
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GaPN 亚稳态合金半导体的 MOVPE 生长和光学表征
DOI：
10.1557/proc-449-23
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
K. Onabe
中科院分区：
文献类型：
--
作者：
K. Onabe
用1，1-二甲基肼（DMHy）作氮源，用无机气相外延（MOVPE）生长了差距1-xNx 1合金半导体，氮浓度高达6.3%。生长特征显示了生长过程中的非平衡环境的关键作用，其中从表面的N解吸限制了N吸附。用时间分辨光致发光和光致发光激发光谱研究了带边态。PL通过吸收边以下的尾态发生。随着N浓度的增加，带边向较低的能量移动，其起源于A线能量（即，隔离的N个状态），而不是在限制x = 0的GaP的间接间隙能量。
The Gap 1– x N x , alloy semiconductor has been grown with the N concentration as high as 6.3% by inetalorganic vapor phase epitaxy (MOVPE) using 1,1-dimethylhydrazine (DMHy) as the N source. The growth characteristics show the key role of the non-equilibrium circumstances during the growth, where the N desorption from the surface limits the N incorporaton. The band-edge states have been studied using time-resolved PL and PL excitation spectroscopies. The PL takes place via the tail states below the absorption edge. The band edge, which shifts to lower energies with increasing N concentration, originates from the A-line energy ( i.e . isolated N states) rather than the indirect-gap energy of GaP in the limit x = 0.