New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
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分子束外延生长的新型半导体 GaNAsBi 合金
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
K. Oe
中科院分区：
文献类型：
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作者：
M. Yoshimoto;Wei Huang;Y. Takehara;J. Saraie;A. Chayahara;Y. Horino;K. Oe
首次采用分子束外延技术在GaAs衬底上生长了GaNyAs_（1-x-yBix）外延层。由GaAs 1-xBix，GaNyAs 1-y和GaNyAs 1-x-yBix组成的多层样品显示出归因于每一层的不同的X射线衍射（XRD）峰。的GaBi的摩尔分数，x，估计卢瑟福背散射光谱和XRD的组合控制在高达4.0%的范围内。GaN的摩尔分数估计从GaAs 1-xBix和GaNyAs 1-x-yBix之间的XRD峰的角间距增加到8.0%，增加供应的射频等离子体中产生的活性氮。
GaNyAs1-x-yBix epilayers were grown on GaAs by molecular beam epitaxy for the first time. Multilayered samples consisting of GaAs1-xBix, GaNyAs1-y and GaNyAs1-x-yBix showed distinct X-ray diffraction (XRD) peaks ascribed to each layer. The GaBi molar fraction, x, estimated by the combination of Rutherford backscattering spectroscopy and XRD was controlled in a range up to 4.0%. The GaN molar fraction estimated from the angular spacing of the XRD peak between GaAs1-xBix and GaNyAs1-x-yBix increased up to 8.0% with increasing supply of activated nitrogen generated in rf plasma.