Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-$\mu$ m InAs–GaAs Quantum-Dot Lasers
Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-$\mu$ m InAs–GaAs Quantum-Dot Lasers
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DOI：
10.1109/lpt.2008.2004778
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发表时间：
2008-10
影响因子：
2.6
通讯作者：
Yulian Cao;Tao Yang;H. Ji;W. Ma;Q. Cao;Lianghui Chen
中科院分区：
文献类型：
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作者：
Yulian Cao;Tao Yang;H. Ji;W. Ma;Q. Cao;Lianghui Chen
研制了掺杂和不掺杂p型调制的1.3微米InAs-GaAs量子点(QD)激光器，并对其特性进行了研究。我们发现在有源区引入p型掺杂可以提高1.3微米InAs-GaAsQD激光器的温度稳定性，但不会增加其饱和模式增益。两种激光器获得的饱和模式增益相同(17.5 cm-1)。此外，对于两种类型的激光器，特性温度都随着腔长的增加而升高，而对于p型掺杂的激光器，由于其较高的增益，其特性温度的改善更为显著。
We have fabricated 1.3-mum InAs-GaAs quantum-dot (QD) lasers with and without p-type modulation doping and their characteristics have been investigated. We find that introducing p-type doping in active regions can improve the temperature stability of 1.3-mum InAs-GaAs QD lasers, but it does not increase the saturation modal gain of the QD lasers. The saturation modal gain obtained from the two types of lasers is identical (17.5 cm-1 ). Moreover, the characteristic temperature increases as cavity length increases for the two types of lasers, and it improves more significantly for the lasers with p-type doping due to their higher gain.